silicon tuning diode this device is designed for fm tuning, general frequency control and tuning, or any topoftheline application requiring backtoback diode configurations for minimum signal distortion and detuning. ? high figure of merit ? q = 140 (typ) @ v r = 3.0 vdc, f = 100 mhz ? guaranteed capacitance range 3742 pf @ v r = 3.0 vdc (mv104) ? dual diodes save space and reduce cost ? monolithic chip provides near perfect matching guaranteed 1.0% (max) over specified tuning range maximum ratings (each diode) rating symbol value unit reverse voltage v r 32 vdc forward current i f 200 madc total power dissipation @ t a = 25 c derate above 25 c p d 280 2.8 mw mw/ c junction temperature t j +125 c storage temperature range t stg 55 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min typ max unit reverse breakdown voltage (i r = 10 m adc) v (br)r 32 e e vdc reverse voltage leakage current t a = 25 c (v r = 30 vdc) t a = 60 c i r e e e e 50 500 nadc diode capacitance temperature coefficient (v r = 4.0 vdc, f = 1.0 mhz) tc c e 280 e ppm/ c c t , diode capacitance v r = 3.0 vdc, f = 1.0 mhz pf q, figure of merit v r = 3.0 vdc f = 100 mhz c r , capacitance ratio c 3 /c 30 f = 1.0 mhz device min max min typ min max mv104 37 42 100 140 2.5 2.8 on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 2 1028 publication order number: mv104/d mv104 dual voltage variable capacitance diode case 2911, style 15 to92 (to226aa) 1 2 3 pin 1 a1 pin 3 a2 pin 2 c
mv104 http://onsemi.com 1029 typical characteristics (each diode) figure 1. diode capacitance (each diode) 100 70 40 20 10 1.0 10 v r , reverse voltage (volts) c t , diode capacitance (pf) figure 2. figure of merit versus voltage v r , reverse voltage (volts) figure 3. figure of merit versus frequency f, frequency (mhz) q, figure of merit 0 550 350 50 6.0 30 q, figure of merit 2000 10 500 100 20 30 70 200 v r = 3.0 vdc t a = 25 c t a = 25 c f = 100 mhz 20 50 100 300 1000 200 50 7.0 2.0 3.0 5.0 figure 4. diode capacitance versus temperature t j , junction temperature ( c) c t , diode capacitance (normalized) 1.04 -75 1.02 1.00 0.98 0.96 -25 +25 +75 +125 4.0 v -50 0 +50 +100 figure 5. reverse current versus reverse voltage v r , reverse voltage (volts) i r , reverse current (na) 10 0 2 0.5 0.1 0.01 10 20 30 t a = 125 c 5.0 15 25 5 1 0.2 0.05 450 250 150 12 18 24 1.03 normalized to c t at t a = 25 c v r = 2.0 v 0.02 t a = 75 c t a = 25 c 20 30 0.5 0.3 3.0 27 9.0 15 21 30 v 1.01 0.99 0.97 100 20 50
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